Growth and characterization of ZnO nanowires and thin films by Young-Woo Heo

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Statementby Young-Woo Heo
The Physical Object
Paginationviii, 163 leaves :
Number of Pages163
ID Numbers
Open LibraryOL25906917M

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Introduction. Among various wide band gap semiconductors, ZnO has been considered as one of the best candidates for economic and large scale optoelectronic applications.It has high breakdown fields, large electron saturation rates, high radiation resistances, and efficient luminescence, and hence can be used in high power devices and optoelectronics at high Cited by: Fig.

3(a), (b), and (c) show the SEM images of the ZnO nanowires on the GZO thin films deposited at, and °C ZnO nanowires were grown successfully on the GZO thin films without any additional seed layers or catalysts. The ZnO nanowires on every GZO thin film are well-aligned with a direction perpendicular to the by: Surface characterization of Au–ZnO nanowire films.

Based on the microscopic analysis a possible growth mechanism of the ZnO nanowires is presented. Synthesis and Growth of ZnO Nanowires Article in Science of Advanced Materials (2) October with 5, Reads How we measure 'reads'.

The epitaxial growth of indium phosphide nanowires (InP NWs) on transparent conductive aluminum-doped zinc oxide (ZnO:Al) thin films is proposed and demonstrated. ZnO:Al thin films were prepared on quartz substrates by radio frequency magnetron sputtering, then InP NWs were grown on them by plasma enhanced metal organic chemical vapor deposition with Cited by: 3.

Growth and characterization of ZnO nanowires for optical applications M S AlSalhi1,2, M Atif1,2,3, A A Ansari4, K Khun5, Z H Ibupoto5 and M Willander5,6,7 1 Physics and Astronomy Department, College of Science, King Saud University, Riyadh, Saudi Arabia 2 Research Chair for Laser Diagnosis of Cancer, King Saud University, Riyadh, Saudi Arabia.

Growth and Characterization of GaAs Nanowires on Carbon Nanotube Composite Films: Towards Flexible Nano-Devices Parsian K. Mohsenia, Gregor Lawsonb, Christophe Couteauc, Gregor Weihsc, Alex Adronov*b and Ray R. LaPierre*a a Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario.

Electrochemical Growth and Characterization of ZnO Nanowires by Lilei Hu A thesis Figure Diagram of growth rate of ZnO nanowires grown through electrochemical deposition Figure energy band gap diagrams for p-type silicon and n-type thin film ZnO seed layer.

Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed.

ZnO and GaN micro/nanowires are promising piezoelectric materials for energy harvesting and piezotronic device applications. The second part of this study is focused on the growth of ZnO and GaN micro/nanowires by physical vapor deposition techniques.

The morphology and chemical compositions are revealed by electron by: 2. In the current work aligned ZnO nanowires were grown on p-GaN thin films for optoelectronic applications, using a vapour phase technique in a tubular furnace.

To investigate the growth of ZnO nanowires at the interface with GaN, the heterojunction were characterized by scanning electron microscopy and X-ray photoel. We report on the growth and characterization of high-quality GaN nanowires for hydrogen sensors.

We grew the GaN nanowires by catalytic chemical vapor deposition (CVD) using gold thin films as a catalyst on a Si wafer with an insulating SiO2 layer. Structural characterization of the as-grown nanowires by several methods shows that the nanowires are Cited by: In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films.

Metallic Zn films with thicknesses of nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between °C to °C.

Surface morphology, Cited by: Title of Document: DLC Thin Film Assisted ZnO Nanowires Growth Sheng-Yu Young, Master of Science, Directed By: Professor Lourdes Salamanca-Riba Department of Materials Science and Engineering In this study, we successfully fabricated dense, uniform, vertically aligned ZnO NWs on top of DLC films.

Hydrothermal zinc oxide nanowire growth using zinc acetate dihydrate salt - Volume 27 Issue 11 - Mehmet Can Akgun, Yunus Eren Kalay, Husnu Emrah Unalan optical and electrical properties of hydrothermal assisted zinc oxide nanorods. Thin Solid Films, Vol.

Issue., p. CrossRef; Growth of ZnO nanowires on multi-layered polymer Cited by: Semiconducting materials are widely used in several applications such as photonics, photovoltaics, electronics, and thermoelectrics, because of their optical and electro-optical features.

The fundamental and technological importance of these materials is due to the unique physical and chemical properties. Over the years, numerous methods have been developed Cited by: 1. Selective growth of CuO nanowires on the etched face of Al 2 O 3 /Cu/Al 2 O 3 thin-film multilayer patterns was achieved by ambient oxidation at °C.

The nanowires were observed to selectively grow only from the pattern edge with diameter limited by Cited by: ZnO nanowires (or nanorods) have been widely studied due to their unique material properties and remarkable performance in electronics, optics, and photonics.

Recently, photocatalytic applications of ZnO nanowires are of increased interest in environmental protection applications. This paper presents a review of the current research of ZnO nanowires (or nanorods) with Cited by: Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge.

Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor–solid mechanism without using any predeposited metal Cited by:   The present work reports on the growth and characterization of titanium nitride (TiN) nanowires on silicon substrate using a pulsed laser deposition (PLD) method.

The TiN nanowires were grown on single crystal silicon substrate with () and () orientations at a range of substrate temperatures and under both nitrogen ambient and : Seyram Gbordzoe, K.

Mensah-Darkwa, Ram Gupta, Dhananjay Kumar. ZnO nanowires were grown on ZnO thin films deposited by MOCVD at – °C. Increasing film deposition temperature improved its crystalline quality, which affected the subsequent growth of vertical nanowires.

ZnO nanowires grown on epitaxial thin film deposited at °C were the most vertically aligned. In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of nm have been deposited on a glass substrate by the PVD technique.

The deposited zinc thin films were oxidized in air at various temperatures ranging between °C to ° by: Synthesis and electrical characterization of ZnO and TiO2 thin films and their use as sensitive layer of pH field effect transistor sensors; Comparative study of the antimicrobial effect of different antibiotics mixed with CuO, MgO and ZnO nanoparticles in Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli cultures; In this study, ZnO nanowire arrays were prepared using a hydrothermal method.

During growth, polyethyleneimine (PEI) and ammonia were added to adjust the structure and optical properties of the ZnO nanowires. Emission analysis revealed visible photoluminescence emissions from ZnO nanowires produced under various growth conditions.

To correlate the relationship between Cited by: X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(), GaAs().

ZnO nanowires have advantages of high surface area to volume ratio, with the prospective for nanoscale control of doping the electrical properties for 1-D nanoelectronic devices. Many techniques have been tried to achieve high quality ZnO nanowires in large scale with low cost and simple : Lilei Hu.

Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates.

In this chapter, the epitaxial growth of both III–V nanowires and Cited by: 1. ZnO Nanowires on Sapphire by VLS method SEM images of ZnO nanowire arrays grown on a sapphire substrate, (a) shows patterned growth, (b) shows a higher resolution image of the parallel alignment of the nanowires, and (c) shows the hexagonal cross- section of the nanowires (Huang et al., ).

Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation L. Shekari, 1 H. Abu Hassan, 1 S. Thahab, 2 and Z. Hassan 1 1 Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, USM, Penang, MalaysiaCited by: 4.

@article{osti_, title = {Temperature dependent growth of GaN nanowires using CVD technique}, author = {Kumar, Mukesh, E-mail: [email protected] and Singh, R.

and Kumar, Vikram}, abstractNote = {Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. Kyung-Sik Shin, Hye-Jeong Park, Brijesh Kumar, Kyoung-Kook Kim, Soo-Ghang Ihn and Sang-Woo Kim, Low-temperature growth and characterization of ZnO thin films for flexible inverted organic solar cells, Journal of Materials Chemistry, 21, 33, (), ().

Abstract. This paper reported a simple and effective method for fabricating and patterning highly ordered ZnO nanorod arrays on H 2-decomposed GaN epilayer via hydrothermal edge of pattern, which has been decomposed by H 2 flow, provides appropriate nucleation sites for the selective-growth of aligned ZnO nanorods.

The density of ZnO nanorod arrays assembled the Cited by: 3. Nanowire Characterization. We employ a variety of nanocharacterization techniques to understand and ultimately improve the nanowire properties.

For example, spatially-resolved cathodoluminescence experiments are being used to map the frequencies and intensities of light emission from these nanowires with nanoscale resolution, as shown in the accompanying figure. Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires.

Author Meyyappan is the director and senior scientist at Ames Center for Nanotechnology and a renowned leader in nanoscience and. Copper catalyzed the growth of ZnO nanowires of diameters in the range [80?] nm. The same method, applied with tin instead of copper, gives similar results.

However, by lowering the growth temperature, thin ZnO nanowires (diameter ~6 nm) are synthesized using Sn as the by: 6. Here we report the directed growth of ZnO nanowires on multilayer graphene films (MGFs) without the use of metal seed materials.

The ZnO source substance was diffused onto the MGF surface, where nanowires tended to grow in the high surface energy by: ZnO nanowires have advantages of high surface area to volume ratio, with the prospective for nanoscale control of doping the electrical properties for 1-D nanoelectronic devices.

Many techniques have been tried to achieve high quality ZnO nanowires in large scale with low cost and simple fabrication. Growth of -SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane B.-C. Kang, S.-B. Lee, and J.-H. Boo Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, SuwonKoreaCited by: The lower ZT found in the nanowires is attributed to the high impurity or carrier concentration and defects in the nanowires.

The micro-device is further modified to extend its use to characterization of the in-plane thermoelectric properties of thin films. Abstract. At present, inorganic semiconducting materials are the most economical and viable source for the renewable energy industry.

The present work deals with the morphological and optical characterization of copper oxide (CuO) and zinc oxide (ZnO) thin films fabricated by layer by layer deposition on nickel oxide (NiO) coated indium tin oxide (ITO) Cited by:.

vii Processing And Characterization Of Zinc Oxide Thin Films Michael Depaz ABSTRACT Zinc oxide is a very versatile material that can be used in many microsystems and MEMS applications. ZnO thin f ilm has been utilized in a wi de variety of MEMS devices because of its unique piezoelectric, optical and electrical properties.Edited by well-known pioneers in the field, this handbook and ready reference provides a comprehensive overview of transparent conductive materials with a strong application focus.

Following an introduction to the materials and recent developments, subsequent chapters discuss the synthesis and characterization as well as the deposition techniques that are commonly .Characterization of Nanowire, Substrates and Membranes. The X-ray diffraction (XRD) patterns of the as-synthesized samples are shown in Figure 1 diffraction peaks in the XRD pattern of Zn 2 GeO 4 nanowires can be assigned to the rhombohedral phase of Zn 2 GeO 4 (JCPDS ) with lattice constants of a = b = nm and c = nm, α = β = 90° and Cited by:

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